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This benefit,. The SO-8 has been modified through a customized. With these improvements, multiple devices. The package is designed for vapor phase,. Power dissipation. Absolute Maximum Ratings. Drain-to-Source Voltage. Gate-to-Source Voltage. Power Dissipation. Linear Derating Factor. Junction and Storage Temperature Range. Thermal Resistance Ratings. PD - I. Top View. Typ Max. Min Typ Max Units. Drain-to-Source Breakdown Voltage. R DS on.
Static Drain-to-Source On-Resistance. V GS th. Gate Threshold Voltage. Forward Transconductance. I DSS. Drain-to-Source Leakage Current. I GSS. Gate-to-Source Forward Leakage. Gate-to-Source Reverse Leakage. Q g Total Gate Charge. Q gs Gate-to-Source Charge. Q gd Gate-to-Drain "Miller" Charge. R G Gate Resistance. Turn-On Delay Time. Turn-Off Delay Time. C iss Input Capacitance. C oss Output Capacitance. C rss Reverse Transfer Capacitance. Source-Drain Ratings and Characteristics. Continuous Source Current.
Body Diode. Pulsed Source Current. Q rr Reverse Recovery Charge. See fig. See Figure Surface mounted on FR-4 board. Download IRF Datasheet. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
S S S G The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0. Coefficient 30 ——— ——— 0.
IRF7413 MOSFET. Datasheet pdf. Equivalent
Datasheet IRF7413PBF - International Rectifier MOSFET, N, LOGIC, SO-8
F7413 . Infineon Technologies Authorized Resource & Competitive Price